Adjunct Senior Research Scientist
Brookhaven National Labs
msh2102@columbia.edu

My current research in collaboration with the NSEC is directed to understand the electronic properties of nanoscale materials, particularly systems based on organic molecules coupled to metallic electrodes to form a circuit. The interplay of bonding and electronic states at such interfaces is at the heart of understanding electron transport through molecular junctions. I use detailed quantum mechanical calculations of the electronic properties of these systems to build a theory of the electron transport and how it depends on the properties of the molecules and the bonding to the metals. This is an initial step towards design and fabrication of nanoscale structures with novel characteristics.

My research is now also part of the Center for Functional Nanomaterials at Brookhaven National Laboratory. The theory facility is available for user projects and collaboration (www.bnl.gov/cfn).

Dr. Hybertsen holds a BA in Physics from Reed College (1980) and a PhD in Physics from The University of California, Berkeley (1986). His thesis research concerned exchange and correlation in semiconductors and insulators. Dr. Hybertsen joined Bell Laboratories as a postdoctoral member of technical staff in 1986. He was a member of technical staff from 1988 to 1997, conducting a variety of research projects in the theory of the electronic properties of materials (bulk semiconductors, semiconductor surfaces and interfaces, high temperature superconducting cuprates, porous silicon, optoelectronic devices). From 1997 to 2001, Dr. Hybertsen supervised the Device and Materials Physics Group in the Semiconductor Photonics Research Department, first at Bell Laboratories and then as a part of Agere Systems (formerly the microelectronics business of Lucent Technologies). He continued as a consulting member of technical staff with Agere Systems through 2002. Dr. Hybertsen joined Columbia University in 2003 as a Senior Research Scientist in the Department of Applied Physics and Applied Mathematics and with the Center for Electron Conduction in Molecular Nanostructures. Dr. Hybertsen is a fellow of the American Physical Society and a member of the IEEE.

• "Transition Structure at the Si(100)-SiO2 Interface," A. Bongiorno, A. Pasquarello, M.S. Hybertsen, and L.C. Feldman, Phys. Rev. Lett. 90, 186101 (2003).
• "Microscopic Simulation of the Temperature Dependence of Static and Dynamic 1.3mm Multi-Quantum-Well Laser Performance," B. Witzigmann, M.S. Hybertsen, C.L. Reynolds Jr., G.L. Belenky, L.Shterengas, and G.E. Shtengel, IEEE J. of Quantum Electron., vol. 39, no. 1, pp. 120-129, 2003.
• "Interface structure between silicon and its oxide by first-principles molecular dynamics," A. Pasquarello, M.S. Hybertsen and R. Car, Nature 396, 58 (1998).
• "Absorption and Emission of Light from Nanoscale Silicon Structures," M.S. Hybertsen, Phys. Rev. Lett. 72, 1514 (1994).
• "Model for Low Energy Electronic States Probed by X-ray Absorption in High Tc Cuprates," M.S. Hybertsen, E.B. Stechel, W.M.C. Foulkes, and M. Schluter, Phys. Rev. B 45, 10032 (1992).
• "Electron Correlation in Semiconductors and Insulators: Band Gaps and Quasiparticle Energies," M.S. Hybertsen and S.G. Louie, Phys. Rev. B 34, 5390 (1986).